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| SPICE MODEL: MMDT4146 MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * Complementary Pair One 4124-Type NPN, One 4126-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C2 A B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B C D F M G H K 0.65 Nominal Mechanical Data * * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42). Terminal Connections: See Diagram Marking (See Page 3): K12 Ordering & Date Code Information: See Pages 2 & 3 Weight: 0.006 grams (approx.) H J K L M a J D F L E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section C2 B1 E1 All Dimensions in mm E2 B2 C1 Maximum Ratings, NPN 4124 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA NPN 4124 Section 30 25 5.0 200 200 625 Unit V V V mA mW C/W Maximum Ratings, PNP 4126 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Notes: @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA PNP 4126 Section -25 -25 -4 -200 200 625 Unit V V V mA mW C/W 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30162 Rev. 9 - 2 1 of 5 www.diodes.com MMDT4146 a Diodes Incorporated Electrical Characteristics, NPN 4124 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Cobo Cibo hfe fT hFE VCE(SAT) VBE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Symbol @ TA = 25C unless otherwise specified Min 30 25 5.0 3/4 3/4 120 60 3/4 3/4 3/4 3/4 120 300 Max 3/4 3/4 6.0 50 50 360 3/4 0.30 0.95 4.0 8.0 480 3/4 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 20V, IE = 0V VEB = 3.0V, IC = 0V IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz 3/4 V V pF pF 3/4 MHz Electrical Characteristics, PNP 4126 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Cobo Cibo hfe fT NF hFE VCE(SAT) VBE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Symbol @ TA = 25C unless otherwise specified Min -25 -25 -4.0 3/4 3/4 120 60 3/4 3/4 3/4 3/4 120 250 3/4 Max 3/4 3/4 3/4 -50 -50 360 3/4 -0.40 -0.95 4.5 10 480 3/4 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -20V, IE = 0V VEB = -3.0V, IC = 0V IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -50mA, IB = -5.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz 3/4 V V pF pF 3/4 MHz dB Ordering Information Device (Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel MMDT4146-7-F Notes: 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30162 Rev. 9 - 2 2 of 5 www.diodes.com MMDT4146 Marking Information K12 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 K12= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D 100 f = 1MHz 300 250 200 150 100 50 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 350 PD, POWER DISSIPATION (mW) 10 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (PNP-4126) 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 1 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (PNP-4126) 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-4126) DS30162 Rev. 9 - 2 3 of 5 www.diodes.com MMDT4146 1.0 15 f = 1MHz VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 10 0.8 0.7 5 Cibo 0.6 IC IB = 10 0.5 1 10 100 0 0.1 1 10 Cobo 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-4126) 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (NPN-4124) IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (NPN-4124) 10 IC IB = 10 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-4124) VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-4124) DS30162 Rev. 9 - 2 4 of 5 www.diodes.com MMDT4146 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30162 Rev. 9 - 2 5 of 5 www.diodes.com MMDT4146 |
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